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Follow on Google News | High Power 633nm Red Laser Diode Poised to Smash He-Ne Gas Laser MarketThe Oclaro HL63163DG semiconductor laser diode presents system designers with a realistic alternative to He-Ne gas lasers and uncompromising performance for biomedical, inspection and measurement markets
The Oclaro HL63163DG presents system designers with a long-awaited and realistic alternative to large, expensive and wasteful He-Ne gas lasers. This diode is compact, both cost and energy-efficient and offers increased measurement speed, stability and accuracy, all the essential performance characteristics for biomedical and industrial applications, previously only achievable when using He-Ne gas lasers. “We expect to see the HL63163DG laser cannibalise the He-Ne gas laser market as we have succeeded in reducing the size of the laser and lowering power consumption without compromising on the performance required by the biomedical, inspection and measurement markets,” said Takayuki Kanno, President, Oclaro Japan and GM of the Modules and Devices Business Unit. “A semiconductor laser solution was long overdue and Oclaro was able to overcome the design challenges to produce a sophisticated and efficient laser diode capable of delivering a high power 633nm beam,” he added. Building on advancements in laser technologies, the HL63163DG AlGaInP laser diode was designed to operate at 100mW optical output in the 633nm wavelength band with a low power consumption of only 0.4W in a 5.6mm TO industry-standard package with TE mode oscillation. It has a low operating current of 170mA (typ.), threshold current of 70mA (typ.), operating voltage of 2.6V (typ.) and LD reverse voltage of 2V. Operating temperature is from -10 to +40 degrees Centigrade. The Oclaro HL63163DG will be in full, volume production from January 2014. Samples for testing are available from the Optoelectronics Company. End
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