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Follow on Google News | New Yorker Electronics Releases N-Channel MOSFET with the Lowest Maximum RDS(on) RatingVishay Siliconix SiRA20DP TrenchFET Gen IV N-Channel MOSFET Increases Power Density While Cutting Condition Power Loss
The Vishay SiRA20DP N-Channel 25V device also features a gate-drain charge/gate- The SiRA20DP is a 100% Rg and UIS tested TrenchFET Gen IV MOSFET. Typical applications include synchronous rectification, high power density DC/DC, synchronous buck converter, OR-ing, load switching and battery management. The Vishay MOSFET is housed in the conventional PowerPAK® SO-8 design, delivering higher power density with no change to its package dimension or its pin configuration. A 10mil clip reduces any package-contributed resistance by 66-percent, maximizing the performance of the silicon. Features & Benefits: • Lowest maximum RDS(on) rating at VGS = 10V • Increases power density as the RDS(on) cuts conduction power loss • Lowest Qg for devices with maximum RDS(on) < 0.6mΩ • High efficiency for DC/DC conversion • Available in PowerPAK SO-8 package • Optimized Qg, Qgd and Qgd/Qgs ratios reduce switching-related power loss • 100% Rg and UIS tested • Typical Fall Time: 16 ns / Typical Rise Time: 95 ns Typical Turn-Off Delay Time: 47 ns / Typical Turn-On Delay Time: 51 ns Applications: • OR-ing • Battery management and load switching • Synchronous rectification • Synchronous buck converter • High power density DC/DC New Yorker Electronics is a franchise distributor for Vishay Siliconix and carries the full line of Vishay discrete semiconductors (diodes, MOSFET transistors and infrared optoelectronics) http://www.newyorkerelectronics.com/ End
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