DULLES, Va. -
June 4, 2021 -
PRLog -- - GeneSiC Semiconductor's next-generation 750V G3R™SiC MOSFETs will deliver unprecedented levels of performance, robustness and quality that exceeds its counterparts. System benefits include low on-state drops at operating temperatures, faster switching speeds, increased power density, minimal ringing (low EMI) and compact system size. GeneSiC's G3R™, offered in optimized low-inductance discrete packages (SMD and through hole), are optimized to operate with lowest power losses under all operating conditions and ultra-fast switching speeds. These devices have substantially better performance levels as compared to contemporary SiC MOSFETs.
"High-efficiency energy usage has become a critical deliverable in next-generation power converters and SiC power devices continue to be the key components driving this revolution. After years of development work towards achieving the lowest on-state resistance and robust short circuit and avalanche performance, we are excited to release the industry's best performing 750V SiC MOSFETs. Our G3R™ enable power electronics designers to meet the challenging efficiency, power density and quality goals in applications like solar inverters." said Dr. Ranbir Singh, President at GeneSiC Semiconductor.
G3R60MT07J (
https://www.genesicsemi.com/sic-mosfet/G3R60MT07J/G3R60MT...) – 750V 60mΩ G3R™ TO-263-7 SiC MOSFET
G3R60MT07D (
https://www.genesicsemi.com/sic-mosfet/G3R60MT07D/G3R60MT...) – 750V 60mΩ G3R™ TO-247-3 SiC MOSFET
G3R60MT07K (https://www.genesicsemi.com/
sic-mosfet/G3R60MT07K/
G3R60MT07K.pdf)
– 750V 60mΩ G3R™ TO-247-4 SIC MOSFET
Features - - Industry's lowest gate charge (QG ) and internal gate resistance (RG(INT) )
- Lowest RDS(ON) change with temperature
- Low output capacitance (COSS ) and miler capacitance (CGD )
- 100% avalanche (UIL) tested during production
- Industry-leading short circuit withstand capability
- Fast and reliable body diode with low VF and low QRR
- High and stable gate threshold voltage (VTH ) across all temperature and drain-bias conditions
- Advanced packaging technology for lower thermal resistance and lower ringing
- Manufacturing uniformity of RDS(ON) , VTH and breakdown voltage (BV)
- Comprehensive product portfolio and safer supply chain with automotive-qualified high volume manufacturing
Applications - - Solar (PV) Inverters
- EV / HEV Onboard Chargers
- Server & Telecom Power Supplies
- Uninterruptible Power Supplies (UPS)
- DC-DC Converters
- Switched Mode Power Supplies (SMPS)
- Energy Storage and Battery Charging
- Induction Heating
All of GeneSiC Semiconductor's SiC MOSFETs are targeted for automotive applications (AEC-Q101) and PPAP-capable.
For datasheet and other resources, visit - https://www.genesicsemi.com/
sic-mosfet/ or contact sales@genesicsemi.com
All devices are available from authorized distributors - https://www.genesicsemi.com/
sales-support/
Digi-key Electronics (https://www.digikey.com/
short/43pmvz)
Newark Electronics (https://www.newark.com/
c/semiconductors-
discretes/power-
mosfets/silicon-
carbide-sic-
mosfets?brand=
genesic-semiconductor)
Mouser Electronics (https://mou.sr/
2MNY9B1)
Arrow Electronics (https://www.arrow.com/
en/manufacturers/
genesic-semiconductor/
diodes-transistors-
and-thyristors/
fet-transistors/
mosfets)
https://www.genesicsemi.com/press-release-G3R-750V-sic-mosfet/