GeneSiC's 3rd Generation (G3R™) 750V SiC MOSFETs Offer Unparalleled Performance and Reliability

GeneSiC expands its portfolio of industry-leading 3rd generation silicon carbide MOSFETs with 750V G3R™ that offer superior performance, robustness and quality to realize highest levels of efficiency and system reliability
By: GeneSiC Semiconductor
 
DULLES, Va. - June 4, 2021 - PRLog -- - GeneSiC Semiconductor's next-generation 750V G3R™SiC MOSFETs will deliver unprecedented levels of performance, robustness and quality that exceeds its counterparts. System benefits include low on-state drops at operating temperatures, faster switching speeds, increased power density, minimal ringing (low EMI) and compact system size. GeneSiC's G3R™, offered in optimized low-inductance discrete packages (SMD and through hole), are optimized to operate with lowest power losses under all operating conditions and ultra-fast switching speeds. These devices have substantially better performance levels as compared to contemporary SiC MOSFETs.

"High-efficiency energy usage has become a critical deliverable in next-generation power converters and SiC power devices continue to be the key components driving this revolution. After years of development work towards achieving the lowest on-state resistance and robust short circuit and avalanche performance, we are excited to release the industry's best performing 750V SiC MOSFETs. Our G3R™ enable power electronics designers to meet the challenging efficiency, power density and quality goals in applications like solar inverters."  said Dr. Ranbir Singh, President at GeneSiC Semiconductor.

G3R60MT07J (https://www.genesicsemi.com/sic-mosfet/G3R60MT07J/G3R60MT...) – 750V 60mΩ G3R™ TO-263-7 SiC MOSFET

G3R60MT07D (https://www.genesicsemi.com/sic-mosfet/G3R60MT07D/G3R60MT...) – 750V 60mΩ G3R™ TO-247-3 SiC MOSFET

G3R60MT07K (https://www.genesicsemi.com/sic-mosfet/G3R60MT07K/G3R60MT07K.pdf) – 750V 60mΩ G3R™ TO-247-4 SIC MOSFET

Features -
  • Industry's lowest gate charge (QG ) and internal gate resistance (RG(INT) )
  • Lowest RDS(ON) change with temperature
  • Low output capacitance (COSS ) and miler capacitance (CGD )
  • 100% avalanche (UIL) tested during production
  • Industry-leading short circuit withstand capability
  • Fast and reliable body diode with low VF and low QRR
  • High and stable gate threshold voltage (VTH ) across all temperature and drain-bias conditions
  • Advanced packaging technology for lower thermal resistance and lower ringing
  • Manufacturing uniformity of RDS(ON) , VTH and breakdown voltage (BV)
  • Comprehensive product portfolio and safer supply chain with automotive-qualified high volume manufacturing

Applications -
  • Solar (PV) Inverters
  • EV / HEV Onboard Chargers
  • Server & Telecom Power Supplies
  • Uninterruptible Power Supplies (UPS)
  • DC-DC Converters
  • Switched Mode Power Supplies (SMPS)
  • Energy Storage and Battery Charging
  • Induction Heating

All of GeneSiC Semiconductor's SiC MOSFETs are targeted for automotive applications (AEC-Q101) and PPAP-capable.

For datasheet and other resources, visit - https://www.genesicsemi.com/sic-mosfet/ or contact sales@genesicsemi.com

All devices are available from authorized distributors - https://www.genesicsemi.com/sales-support/

Digi-key Electronics (https://www.digikey.com/short/43pmvz)

Newark Electronics (https://www.newark.com/c/semiconductors-discretes/power-mosfets/silicon-carbide-sic-mosfets?brand=genesic-semiconductor)

Mouser Electronics (https://mou.sr/2MNY9B1)

Arrow Electronics (https://www.arrow.com/en/manufacturers/genesic-semiconductor/diodes-transistors-and-thyristors/fet-transistors/mosfets)

https://www.genesicsemi.com/press-release-G3R-750V-sic-mosfet/

Contact
Robert Siddle
***@genesicsemi.com
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Source:GeneSiC Semiconductor
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